Anzahl der Einträge: 22.
2001
Ganichev, Sergey,
Ketterl, Hermann,
Prettl, Wilhelm,
Merkulov, I.,
Perel, V.,
Yassievich, Irina und
Malyshev, A.
(2001)
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities.
Physical Review B 63 (20), 201204(R).
Ganichev, Sergey,
Danilov, Sergey,
Belkov, Vassilij,
Ivchenko, Eougenious,
Ketterl, Hermann,
Wegscheider, Werner,
Vorobjev, L. E.,
Bichler, Max und
Prettl, Wilhelm
(2001)
Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs.
Physica E Low-dimensional Systems and Nanostructures 10 (1-3), S. 52-56.
Zugang zum Volltext eingeschränkt.
Ganichev, Sergey,
Ivchenko, Eougenious,
Ketterl, Hermann,
Vorobjev, L. E.,
Bichler, Max,
Wegscheider, Werner und
Prettl, Wilhelm
(2001)
Circular photogalvanic effect in p-GaAs/AlGaAs MQW.
In:
Miura, Noboru und
Ando, T., (eds.)
Proceedings of the 25th International Conference on the Physics of Semiconductors.
Springer proceedings in physics, 87.
Springer, Berlin, S. 719-720.
ISBN 3-540-41778-8.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ivchenko, Eougenious,
Ketterl, Hermann,
Vorobjev, L.,
Bichler, Max,
Wegscheider, Werner und
Prettl, Wilhelm
(2001)
Circular photogalvanic effect in p-GaAs/AlGaAs MQWs.
In:
Miura, Noboru und
Ando, T., (eds.)
Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II.
Springer Proceedings in Physics, 87.
Springer, Berlin, S. 719-720.
ISBN 3-540-41778-8.
Ganichev, Sergey,
Ketterl, Hermann und
Prettl, Wilhelm
(2001)
Sympos. Fast room temperature detection of state of circular polarization of terahertz radiation.
In:
Jones, Eric D. und
Manasreh, Omar und
Choquette, Kent D. und
Friedman, Daniel J. und
Johnstone, Daniel K., (eds.)
Materials Research Society Proceedings; 692.
MRS, Warrendale, Pa., H4.3.1.
ISBN 1-558-99628-1.
Ganichev, Sergey,
Ketterl, Hermann,
Prettl, Wilhelm,
Merkulov, I.,
Perel, V.,
Yassievich, Irina und
Malyshev, A.
(2001)
Giant negative magnetoresistance in germanium doped by multiply charged impurities.
In: 21st International Conference on Defects in Semiconductors, 16. - 20. Juli 2001, Giessen, Germany.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ketterl, Hermann,
Perel, V.,
Yassievich, Irina und
Prettl, Wilhelm
(2001)
High-frequency regime of electron tunneling.
In:
Miura, Noboru und
Ando, T., (eds.)
Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II.
Springer Proceedings in Physics, 87.
Springer, Berlin, S. 1435.
ISBN 3-540-41778-8.
2000
Ganichev, Sergey,
Ivchenko, Eougenious,
Ketterl, Hermann,
Prettl, Wilhelm und
Vorobjev, L.
(2000)
Circular photogalvanic effect in p-GaAs/AlGaAs MQWs.
In: 25th International Conference on the Physics of Semiconductors, 18. - 22. August 2000, Osaka, Japan.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ketterl, Hermann,
Perel, V.,
Yassievich, Irina und
Prettl, Wilhelm
(2000)
High-frequency regime of electron tunneling.
In: 25th International Conference on the Physics of Semiconductors, 18. - 22. August 2000, Osaka, Japan.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ivchenko, Eougenious,
Ketterl, Hermann,
Prettl, Wilhelm und
Vorobjev, L.
(2000)
Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in MQWs.
In: 1st International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-I), 13. – 15. September 2000, Sendai, Japan.
Volltext nicht vorhanden.
1999
Ketterl, Hermann,
Ziemann, E.,
Ganichev, Sergey,
Belyaev, A.,
Schmult, Stefan,
Prettl, Wilhelm und
Yassievich, Irina
(1999)
Terahertz tunnel ionization of DX centers in AlGaAs:Te.
Physica B 273-27, S. 766-769.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1999)
Carrier tunneling in high-frequency electric fields.
In:
Gershoni, David, (ed.)
24th International Conference on the Physics of Semiconductors: The physics of semiconductors; Jerusalem, Israel August 2 - 7, 1998.
World Scientific, Singapore, S. 225.
ISBN 981-02-3613-1.
Ketterl, Hermann,
Ziemann, E.,
Ganichev, Sergey,
Belyaev, A.,
Schmult, Stefan und
Prettl, Wilhelm
(1999)
Terahertz tunnel ionization of DX centers in AlGaAs:Te.
In: 20th International Conference on Defects in Semiconductors (ICDS-20), 26. - 30. Juli 1999, Berkeley, USA.
Volltext nicht vorhanden.
1998
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina und
Perel, V.
(1998)
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation.
In:
Parker, Terence und
Smith, S. R. P., (eds.)
Proceedings of 23rd International Conference on Infrared and Millimeter Waves, Essex, UK.
, S. 62.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina und
Perel, V.
(1998)
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation.
In: 23th International Conference on Infrared and Millimeter Waves,, 7. - 11. September 1998, Wivenhoe Park, Colchester, Essex, UK.
Volltext nicht vorhanden.
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