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Publikationen von Gloukh, K.

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Gehe zu: 1995 | 1993 | 1992 | 1990 | 1989 | 1988 | 1987
Anzahl der Einträge: 36.

1995

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1995) Fast point detector of submillimeter radiation. In: Levinštejn, Michail E., (ed.) Best of Soviet semiconductor physics and technology, 1989 - 1990. World Scientific, Singapore, S. 567. ISBN 981-021579-7. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Martisov, M., Shik, A. und Yaroshetskii, I. (1995) Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon. In: Levinštejn, Michail E., (ed.) Best of Soviet semiconductor physics and technology, 1989 - 1990. World Scientific, Singapore, S. 382. ISBN 981-021579-7. Volltext nicht vorhanden.

1993

Beregulin, E., Ganichev, Sergey, Gloukh, K., Lyanda-Geller, Y. und Yaroshetskii, I. (1993) Linear photogalvanic effect in p-type GaSb at infrared and submillimeter wavelengths. Physics of the solid state 35 (2), S. 238-239.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Geller, Y. und Yaroshetskii, I. (1993) Linear photovoltaic effect in A3B5 semiconductors in FIR wavelengths region. In: 13th General Conference of the Condensed Matter Division of the European Physical Society was held in conjunction with the Frühjahrstagung des Arbeitskreises Festkörperphysik der Deutschen Physikalischen Gesellschaft, 29.03. - 02.04.1993, Regensburg, Germany. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1993) New fast point detector of FIR radiation. In: Beltram, Fabio und Gornik, Erich, (eds.) Physical concepts and materials for novel optoelectronic device applications II: international symposium; 24 - 27 May 1993, Trieste, Italy. SPIE proceedings series, 1985. SPIE, Bellingham, Wash., S. 526-529. ISBN 0-8194-1234-1.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1993) New fast point detector of FIR radiation. In: Physical Concepts and Materials for Novel Optoelectronic Device Applications II, 24. - 27. Mai 1993, Triest, Italy. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Martisov, M., Shik, A. und Yaroshetskii, I. (1993) Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon. In: 8th International Conference on Hot Carierrs in Semiconductors, 16. - 20. August 1993, Oxford, UK. Volltext nicht vorhanden.

1992

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1992) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. Soviet physics JETP 75 (3), S. 495-504.

1990

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Martisov, M., Shik, A. und Yaroshetskii, I. (1990) Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon. Journal of experimental and theoretical physics: JETP 70 (6), S. 1138. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Shik, A. und Yaroshetskii, I. (1990) FIR spectroscopy of 2DEG at high excitation level. In: Bulletin of A. F. Ioffe Physico-Technical Institute and Young scientists of the Institute in Utrecht, 1990, Leningrad, USSR. Volltext nicht vorhanden.

1989

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast point detector of submillimeter radiation. Soviet technical physics letters: Letters to journal of technical physics 15 (4), S. 290-291.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Lyanda-Geller, Y. und Yaroshetskii, I. (1989) Linear photogalvanic effect in p-GaAs at classical frequencies. Soviet physics: Solid state 31 (1), S. 63-64.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Detector for laser radiation on the Schottky-barrier tunnel junctions. In: Soviet Conference on Photoelectrical effects in semiconductors, 1989, Tashkent, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes. In: MacMillan, Ann Simmons und Tucker, Gail M., (eds.) Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989. Pergamon Press, Oxford, S. 155. ISBN 7-80003-063-6; 0-08-037880-3. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes. In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China. Volltext nicht vorhanden.

Andrianov, A., Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1989) Fast detector for the polarization characteristics determination of the pulse IR-FIR laser radiation. In: MacMillan, Ann Simmons und Tucker, Gail M., (eds.) Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989. Pergamon Press, Oxford, S. 165. ISBN 7-80003-063-6; 0-08-037880-3.

Andrianov, A., Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1989) Fast detector for the polarization characteristics determination of the pulse IR-FIR laser radiation. In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Lyanda-Geller, Y. und Yaroshetskii, I. (1989) Linear photogalvanic effect in gallium arsenide in submillimeter wavelength region. Crystal properties and preparation 19-20, S. 327-330.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Martisov, M., Shik, A. und Yaroshetskii, I. (1989) Rapid submillimeter photoconductivity of a two-dimensional electron gas near the surface of silicon. In: 3rd Seminar on the electron processes in two-dimensional systems, 1989, Novosibirsk, USSR. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Yaroshetskii, I. und Yassievich, Irina (1989) Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization. In: MacMillan, Ann Simmons und Tucker, Gail M., (eds.) Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989. Pergamon Press, Oxford, S. 597. ISBN 7-80003-063-6; 0-08-037880-3.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Yaroshetskii, I. und Yassievich, Irina (1989) Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization. In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China. Volltext nicht vorhanden.

1988

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Martisov, M., Shik, A. und Yaroshetskii, I. (1988) Submillimeter photoconductivity in inversion layers at a silicon surface. JETP Letters 48 (5), S. 269-272.

Andrianov, A., Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1988) Fast device for measuring polarization characteristics of submillimeter and IR laser pulses. Soviet technical physics letters 14 (7), S. 580-581.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Lyanda-Geller, Y. und Yaroshetskii, I. (1988) Linear photogalvanic effect in the submillimeter spectral range. Soviet physics Solid State 30 (3), S. 418-422.

Andrianov, A., Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1988) Fast device for measuring polarization characteristics of submillimeter and IR laser pulses. In: 7th Soviet Conference on Photometric and its Metrological Providence, 1988, Moscow, USSR. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Lyanda-Geller, Y. und Yaroshetskii, I. (1988) Linear photovoltaic effect in gallium arsenide in submillimeter region. In: Third Conference on Physics and Technology of GaAs and other III-V Semiconductors: proceedings. Bratislava, S. 327. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Lyanda-Geller, Y. und Yaroshetskii, I. (1988) Linear photovoltaic effect in gallium arsenide in submillimeter region. In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1988) New mechanism of saturation absorption in semiconductors. In: 7th Soviet Conference on Nonresonant Interaction of Radiation with Matter, 1988, Leningrad, USSR. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1988) New mechanism of saturation absorption in semiconductors. In: 11th Soviet Seminar on Interaction of Electromagnetic Waves with Semiconductors and Semiconductor-Dielectric Structures 2, 1988, Saratov, USSR. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1988) Photogalvanic effect in semiconductors in submillimeter region. In: 7th Soviet Conference on Nonresonant Interaction of Radiation with Matter, 1988, Leningrad, USSR. Volltext nicht vorhanden.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Gusev, G., Kvon, Z., Martisov, M., Shik, A. und Yaroshetskii, I. (1988) The nature of submillimeter photoconductivity in 2DEG at a silicon surface. In: 11th Soviet Conference on the Physics of Semiconductors, 1988, Kishinev, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions at plasma reflection of laser light. In: 11th Soviet Seminar on Interaction of Electromagnetic Waves with Semiconductors and Semiconductor-Dielectric Structures 2, 1988, Saratov, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 1: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Acadamey of Sciences, Warsaw, S. 669-672. ISBN 83-00-02465-4.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling stimulation in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: 11th Soviet Conference on the Physics of Semiconductors, 1988, Kishinev, USSR. Volltext nicht vorhanden.

1987

Beregulin, E., Ganichev, Sergey, Gloukh, K. und Yaroshetskii, I. (1987) Nonlinear absorption of submillimeter radiation in germanium due to optical heating of charge carriers. Semiconductors 21 (6), S. 615-618.

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