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Number of items: 11.

Article

Schoedl, T. and Schwarz, Uli and Kümmler, V. and Furitsch, M. and Leber, A. and Miler, A. and Lell, A. and Härle, V. (2005) Facet degradation of GaN heterostructure laser diodes. Journal of Appli ed Physics 97, p. 123102.

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85 (9), pp. 1475-1477.

Kümmler, V. and Lell, Alfred and Härle, Volker and Schwarz, Ulrich and Schoedl, T. and Wegscheider, Werner (2004) Gradual facet degradation of (Al,In)GaN quantum well lasers. Applied Physics Letters 84 (16), pp. 2989-2991.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85, p. 1475.

Schwarz, Uli and Schoedl, T. and Kümmler, V. and Lell, A. and Härle, V. (2004) Laser Diode Facet Degradation Study. MRS Proceeding 798, Y11.10.1.

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83 (20), 4095 .

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. physica status solidi a 200 (1), pp. 143-146.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. phys. stat. sol. (a) 200, p. 143.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83, p. 4095.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419.

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