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Number of items: 11.

Article

Schoedl, T. and Schwarz, Uli and Kümmler, V. and Furitsch, M. and Leber, A. and Miler, A. and Lell, A. and Härle, V. (2005) Facet degradation of GaN heterostructure laser diodes. Journal of Appli ed Physics 97, p. 123102. Volltext nicht vorhanden.

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85 (9), pp. 1475-1477. Zugang zum Volltext eingeschränkt.
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Kümmler, V. and Lell, Alfred and Härle, Volker and Schwarz, Ulrich and Schoedl, T. and Wegscheider, Werner (2004) Gradual facet degradation of (Al,In)GaN quantum well lasers. Applied Physics Letters 84 (16), pp. 2989-2991. Zugang zum Volltext eingeschränkt.
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Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85, p. 1475. Volltext nicht vorhanden.

Schwarz, Uli and Schoedl, T. and Kümmler, V. and Lell, A. and Härle, V. (2004) Laser Diode Facet Degradation Study. MRS Proceeding 798, Y11.10.1. Volltext nicht vorhanden.

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83 (20), 4095 . Zugang zum Volltext eingeschränkt.
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Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. physica status solidi a 200 (1), pp. 143-146. Zugang zum Volltext eingeschränkt.
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Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. phys. stat. sol. (a) 200, p. 143. Volltext nicht vorhanden.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83, p. 4095. Volltext nicht vorhanden.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422. Zugang zum Volltext eingeschränkt.
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Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419. Volltext nicht vorhanden.

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