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Number of items: 22.

Article

Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm and Merkulov, I. and Perel, V. and Yassievich, Irina and Malyshev, A. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B 63 (20), 201204(R).

Ganichev, Sergey and Danilov, Sergey and Belkov, Vassilij and Ivchenko, Eougenious and Ketterl, Hermann and Wegscheider, Werner and Vorobjev, L. E. and Bichler, Max and Prettl, Wilhelm (2001) Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs. Physica E Low-dimensional Systems and Nanostructures 10 (1-3), pp. 52-56.

Ganichev, Sergey and Ivchenko, Eougenious and Ketterl, Hermann and Prettl, Wilhelm and Vorobjev, L. (2000) Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW. Applied Physics Letters 77 (20), pp. 3146-3148.

Ketterl, Hermann and Ziemann, E. and Ganichev, Sergey and Belyaev, A. and Schmult, Stefan and Prettl, Wilhelm and Yassievich, Irina (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. Physica B 273-27, pp. 766-769.

Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm (1999) Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge. Physica B 272 (1-4), pp. 464-466.

Book Section

Ganichev, Sergey and Ivchenko, Eougenious and Ketterl, Hermann and Vorobjev, L. E. and Bichler, Max and Wegscheider, Werner and Prettl, Wilhelm (2001) Circular photogalvanic effect in p-GaAs/AlGaAs MQW. In: Miura, Noboru and Ando, T., (eds.) Proceedings of the 25th International Conference on the Physics of Semiconductors. Springer proceedings in physics, 87. Springer, Berlin, pp. 719-720. ISBN 3-540-41778-8.

Ganichev, Sergey and Ivchenko, Eougenious and Ketterl, Hermann and Vorobjev, L. and Bichler, Max and Wegscheider, Werner and Prettl, Wilhelm (2001) Circular photogalvanic effect in p-GaAs/AlGaAs MQWs. In: Miura, Noboru and Ando, T., (eds.) Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II. Springer Proceedings in Physics, 87. Springer, Berlin, pp. 719-720. ISBN 3-540-41778-8.

Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm (2001) Sympos. Fast room temperature detection of state of circular polarization of terahertz radiation. In: Jones, Eric D. and Manasreh, Omar and Choquette, Kent D. and Friedman, Daniel J. and Johnstone, Daniel K., (eds.) Materials Research Society Proceedings; 692. MRS, Warrendale, Pa., H4.3.1. ISBN 1-558-99628-1.

Ganichev, Sergey and Ketterl, Hermann and Perel, V. and Yassievich, Irina and Prettl, Wilhelm (2001) High-frequency regime of electron tunneling. In: Miura, Noboru and Ando, T., (eds.) Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II. Springer Proceedings in Physics, 87. Springer, Berlin, p. 1435. ISBN 3-540-41778-8.

Ganichev, Sergey and Ziemann, E. and Ketterl, Hermann and Prettl, Wilhelm and Yassievich, Irina and Perel, V. and Wilke, I. and Haller, E. (1999) Carrier tunneling in high-frequency electric fields. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: The physics of semiconductors; Jerusalem, Israel August 2 - 7, 1998. World Scientific, Singapore, p. 225. ISBN 981-02-3613-1.

Ganichev, Sergey and Ziemann, E. and Ketterl, Hermann and Prettl, Wilhelm and Yassievich, Irina and Perel, V. (1998) Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation. In: Parker, Terence and Smith, S. R. P., (eds.) Proceedings of 23rd International Conference on Infrared and Millimeter Waves, Essex, UK. UNSPECIFIED, p. 62.

Conference or Workshop Item

Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm and Merkulov, I. and Perel, V. and Yassievich, Irina and Malyshev, A. (2001) Giant negative magnetoresistance in germanium doped by multiply charged impurities. In: 21st International Conference on Defects in Semiconductors, 16. - 20. Juli 2001, Giessen, Germany.

Ganichev, Sergey and Ivchenko, Eougenious and Ketterl, Hermann and Prettl, Wilhelm and Vorobjev, L. (2000) Circular photogalvanic effect in p-GaAs/AlGaAs MQWs. In: 25th International Conference on the Physics of Semiconductors, 18. - 22. August 2000, Osaka, Japan.

Ganichev, Sergey and Ketterl, Hermann and Perel, V. and Yassievich, Irina and Prettl, Wilhelm (2000) High-frequency regime of electron tunneling. In: 25th International Conference on the Physics of Semiconductors, 18. - 22. August 2000, Osaka, Japan.

Ganichev, Sergey and Ivchenko, Eougenious and Ketterl, Hermann and Prettl, Wilhelm and Vorobjev, L. (2000) Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in MQWs. In: 1st International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-I), 13. – 15. September 2000, Sendai, Japan.

Ganichev, Sergey and Ketterl, Hermann and Beregulin, E. and Prettl, Wilhelm (2000) Spin dependent terahertz nonlinearities in degenerated valence band. In: Sixth International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 2000), 10. - 13. April 2000, Marburg (Lahn), Germany.

Ganichev, Sergey and Ketterl, Hermann and Beregulin, E. and Prettl, Wilhelm (2000) Spinabhängige Terahertz Nichtlinearität im entarteten Valenzband. In: Frühjahrstagung der Deutschen-Physikalischen- Gesellschaft, 27. - 31. März 2000, Regensburg, Germany.

Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm (1999) Spin dependent terahertz nonlinearities in degenerated valence band. In: 11. International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), 19. - 23. Juli 1999, Kyoto, Japan.

Ketterl, Hermann and Ziemann, E. and Ganichev, Sergey and Belyaev, A. and Schmult, Stefan and Prettl, Wilhelm (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. In: 20th International Conference on Defects in Semiconductors (ICDS-20), 26. - 30. Juli 1999, Berkeley, USA.

Ziemann, E. and Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm (1999) Übergang von Poole-Frenkel-Emission zu phononenunterstützter Tunnelionisation tiefer Störstellen in Halbleitern. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1999, Münster.

Ganichev, Sergey and Ziemann, E. and Ketterl, Hermann and Prettl, Wilhelm and Yassievich, Irina and Perel, V. (1998) Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation. In: 23th International Conference on Infrared and Millimeter Waves,, 7. - 11. September 1998, Wivenhoe Park, Colchester, Essex, UK.

Patent

Ganichev, Sergey and Ketterl, Hermann and Prettl, Wilhelm (2000) Schneller Detektor für den Polarisationsgrad zirkular polarisierten Lichtes im Spektralbereich vom langwelligen Infrarot bis sichtbares Licht und eine Methode zur Analyse der Symmetrie und damit technischer Qualität von Quantentrögen basierend auf dem Photogalvanischen Effekt. S. D. Ganichev, H. Ketterl, and W. Prettl.

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