Publikationen von Zepezauer, E.

Zepezauer, E., Kalbeck, A., Ganichev, Sergey, Korzenietz, W. und Prettl, Wilhelm (2000) Near-field induced FIR Josephson-detection by x-axis-oriented YBa_{2}Cu_{3}O_{7-d} -films. International Journal of Infrared and Millimeter Waves 21 (3), S. 355-363.

Zepezauer, E., Shul'man, A. Ya., Ganichev, S. D., Kotel'nikov, I. N., Dizhur, E. M., Ormont, A. B., Fedorov, Yu. V. und Prettl, Wilhelm (2000) Near-zone field enhanced ponderomotive action of FIR laser radiation on the tunnel current through a Schottky barrier. In: Frühjahrstagung der Deutschen-Physikalischen- Gesellschaft, 27. - 31. März 2000, Regensburg, Germany. Volltext nicht vorhanden.

Shul'man, A., Ganichev, Sergey, Dizhur, E., Kotel'nikov, I., Zepezauer, E. und Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. Physica B 272 (1-4), S. 442-447.

Shul'man, A., Ganichev, Sergey, Dizhur, E., Kotel'nikov, I., Zepezauer, E. und Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. In: 11. International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), 19. - 23. Juli 1999, Kyoto, Japan. Volltext nicht vorhanden.

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Dizhur, E., Ormont, A., Zepezauer, E. und Prettl, Wilhelm (1999) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. World Scientific, Singapore, Th-P58. ISBN 981-02-4030-9.

Shul'man, A., Ganichev, Sergey, Kotel'nikov, I., Dizhur, E., Prettl, Wilhelm, Ormont, A., Fedorov, Y. und Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. physica status solidi (a) 175 (1), S. 289-296.

Shul'man, A., Ganichev, Sergey, Kotel'nikov, I., Dizhur, E., Prettl, Wilhelm, Ormont, A., Fedorov, Y. und Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. In: Workshop on Surface and Interface Optics '99 (SIO'99), 04. - 08. Mai 1999, Sainte-Maxime, France. Volltext nicht vorhanden.

Kalbeck, A., Zepezauer, E., Ganichev, Sergey, Korzenietz, W. und Prettl, Wilhelm (1998) FIR-Detektion mit c-Achsen-orientierten epitaktischen YBCO-Schichten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Volltext nicht vorhanden.

Zepezauer, E., Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Ormont, A. und Prettl, Wilhelm (1998) Nahfeld-Verstaerkung des photoresistiven Effektes in n-GaAs/Al-Schottky-Tunnelkontakten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Volltext nicht vorhanden.

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Dizhur, E., Ormont, A., Zepezauer, E. und Prettl, Wilhelm (1998) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: 24th International Conference on the Physics of Semiconductors, 02. - 07. August 1998, Jerusalem, Israel. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Storage of electrons in shallow donor excited states of GaP:Te. Physical Review B (Rapid Communic.) 55 (15), S. 9243-9246.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Accumulation of carriers in a shallow donor excited state of GaP:Te. In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te. In: Michel, Jürgen und Kennedy, Thomas und Wada, Kazumi und Thonke, Klaus, (eds.) Defects in electronic materials II. Materials Research Society symposium proceedings, 442. Materials Research Society, Pittsburgh, Pa., S. 465. ISBN 1-558-99346-0. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Long-living shallow donor excited states of GaP:Te. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1996) Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te. In: MRS Fall Meeting, Symposium Defects in Electronic Materials, 02. - 06. Dezember 1996, Boston, Massachusetts, USA. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1996) Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields. In: Ortenberg, Michael von und Mueller, Hans-Ulrich, (eds.) Conference proceedings / The 21st International Conference on Infrared and Millimeter waves: Berlin, July 14 - 19, 1996, Federal Republic of Germany. Humboldt-Universität, Berlin, CF2. ISBN 3-00-000800-4.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1996) Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields. In: 21st International Conference on Infrared and Millimeter waves, 14. - 19. Juli 1996, Berlin, Germany. Volltext nicht vorhanden.