Entries of Lell, A. on the publication server

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Number of items: 22.

2007

Witzigmann, B., Laino, V., Roemer, F., Lauterbach, C., Schwarz, Uli, Rumbolz, C., Schillgalies, M., Lell, A. and Härle, V. (2007) Analysis of substrate modes in GaN/InGaN Lasers. SPIE proceedings 6468, 64680Q. Fulltext not available.

Braun, Harald, Lauterbach, C., Schwarz, Uli, Laino, V., Witzigmann, B., Rumbolz, C., Schillgalies, M., Lell, A. and Härle, V. (2007) Experimental and Theoretical Study of Substrate Modes in (Al,In)GaN Laser Diodes. phys. stat. sol. (c) 4, p. 2772. Fulltext not available.

Laino, V., Roemer, F., Witzigmann, B., Lauterbach, C., Schwarz, Uli, Rumbolz, C., Schillgalies, M., Furitsch, M., Lell, A. and Här, V. (2007) Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes. IEEE J. Quantum Electronics 43, p. 16. Fulltext not available.

Laubsch, A., Sabathil, M., Bruederl, G., Wagner, J., Strassburg, M., Baur, E., Braun, Harald, Schwarz, Uli, Lell, A., Lutgen, S., Linder, N., Oberschmid, R. and Hahn, B. (2007) Measurement of the internal quantum efficiency of InGaN quantum wells. Proc. SPIE 6486, 64860J. Fulltext not available.

2006

Engl, Karl, Beer, Martin, Gmeinwieser, Nikolaus, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, S., Miler, A., Lugauer, H., Brüderl, G., Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13. Fulltext restricted.

Witzigmann, B., Laino, V., Luisier, M., Schwarz, Uli, Feicht, Georg, Wegscheider, Werner, Engl, K., Furitsch, M., Leber, A., Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104. Fulltext restricted.

Witzigmann, B., Laino, V., Luisier, M., Schwarz, Uli, Fischer, H., Feicht, Georg, Wegscheider, Werner, Rumbolz, C., Lell, A. and Härle, V. (2006) Analysis of temperature dependent optical gain in GaN/InGaN quantum well structures. IEEE Phot. Tech. Lett. 18, p. 1600. Fulltext not available.

Schwarz, Uli, Lauterbach, C., Schillgalies, M., Rumbolz, C., Furitsch, M., Lell, A. and Härle, V. (2006) Time-resolved scanning near-field microscopy of InGaN laser diode dynamics. SPIE proceedings 6184, 61840K. Fulltext not available.

2005

Schoedl, T., Schwarz, Uli, Kümmler, V., Furitsch, M., Leber, A., Miler, A., Lell, A. and Härle, V. (2005) Facet degradation of GaN heterostructure laser diodes. Journal of Appli ed Physics 97, p. 123102. Fulltext not available.

Schwarz, Uli, Pindl, M., Sturm, Evi, Furitsch, M., Leber, A., Miller, S., Lell, A. and Härle, V. (2005) Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes. phys. stat. sol. (a) 202, p. 261. Fulltext not available.

Schwarz, Uli, Pindl, M., Wegscheider, Werner, Eichler, C., Scholz, F., Furitsch, M., Leber, A., Miller, S., Lell, A. and Härle, V. (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 86, p. 161112. Fulltext not available.

Gmeinwieser, N., Gottfriedsen, P., Schwarz, Uli, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Weimar, A., Brüderl, G., Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102. Fulltext not available.

2004

Gmeinwieser, N., Engl, K., Gottfriedsen, P., Schwarz, Uli, Zweck, Josef, Wegscheider, Werner, Miller, S., Lugauer, H., Leber, A., Lell, A. and Härle, V. (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate. Journal of Appli ed Physics 96, J. Appl. Phys.. Fulltext not available.

Schwarz, Uli, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, A. and Härle, V. (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85, p. 1475. Fulltext not available.

Schoedl, T., Schwarz, Uli, Miller, S., Leber, A., Furitsch, M., Lell, A. and Härle, V. (2004) Facet degradation of (Al,In)GaN laser diodes. phys. stat. sol. (a) 201, p. 2635. Fulltext not available.

Schwarz, Uli, Schoedl, T., Kümmler, V., Lell, A. and Härle, V. (2004) Laser Diode Facet Degradation Study. MRS Proceeding 798, Y11.10.1. Fulltext not available.

Schwarz, Uli, Wegscheider, Werner, Lell, A. and Härle, V. (2004) Nitride-based in-plane laser diodes with vertical current path. Proceedings of the SPIE 5365, p. 267. Fulltext not available.

Gmeinwieser, N., Engl, K., Schwarz, Uli, Zweck, Josef, Wegscheider, Werner, Miller, S., Leber, A., Lell, A. and Härle, V. (2004) Strain, wing tilt and Photoluminescence in ELOG GaN on SiC substrates. phys. stat. sol. (a) 201, p. 2760. Fulltext not available.

2003

Schwarz, Uli, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, A. and Härle, V. (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. phys. stat. sol. (a) 200, p. 143. Fulltext not available.

Schwarz, Uli, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, A. and Härle, V. (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83, p. 4095. Fulltext not available.

2002

Kümmler, V., Brüderl, G., Bader, S., Miller, S., Weimar, A., Lell, A., Härle, V., Schwarz, Ulrich, Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422. Fulltext restricted.

Kümmler, V., Brüderl, G., Bader, S., Miller, S., Weimar, A., Lell, A., Härle, V., Schwarz, Uli, Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419. Fulltext not available.

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