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Number of items: 11.
2006
Gmeinwieser, Nikolaus, Gottfriedsen, P., Schwarz, Ulrich, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Engl, Karl, Weimar, A., Brüderl, G., Lell, Alfred and Härle, Volker
(2006)
Long range strain and electrical potential induced by single edge dislocations in GaN.
Physica B Condensed Matter 376-37, pp. 451-454.
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Engl, Karl, Beer, Martin, Gmeinwieser, Nikolaus, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, Stephan, Miler, A., Lugauer, H.-J., Brüderl, G., Lell, Alfred and Härle, Volker
(2006)
Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates.
Journal of Crystal Growth 289 (1), pp. 6-13.
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Witzigmann, B., Laino, V., Luisier, M., Schwarz, Ulrich, Feicht, Georg, Wegscheider, Werner, Engl, Karl, Furitsch, Michael, Leber, Andreas, Lell, Alfred and Härle, Volker
(2006)
Microscopic analysis of optical gain in InGaN/GaN quantum wells.
Applied Physics Letters 88 (2), 021104.
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2005
Gmeinwieser, Nikolaus, Gottfriedsen, P., Schwarz, Ulrich, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Weimar, Andreas, Brüderl, G., Lell, Alfred and Härle, Volker
(2005)
Local strain and potential distribution induced by single dislocations in GaN.
Journal of Applied Physics 98 (11), p. 116102.
Fulltext restricted.
Schwarz, Ulrich, Pindl, Markus, Wegscheider, Werner, Eichler, Christoph, Scholz, Ferdinand, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred and Härle, Volker
(2005)
Near-field and far-field dynamics of (Al,In)GaN laser diodes.
Applied Physics Letters 80 (16), p. 161112.
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2004
Gmeinwieser, Nikolaus, Engl, Karl, Gottfriedsen, P., Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, S., Lugauer, H.-J., Leber, A., Weimar, A., Lell, Alfred and Härle, Volker
(2004)
Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates.
Journal of Applied Physics 96 (7), pp. 3666-3672.
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Gmeinwieser, Nikolaus, Engl, Karl, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, Stephan, Leber, Andreas, Weimar, Andreas, Lell, Alfred and Härle, Volker
(2004)
Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates.
physica status solidi a 201 (12), pp. 2760-2763.
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Schwarz, Ulrich, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, Alfred and Härle, Volker
(2004)
Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers.
Applied Physics Letters 85 (9), pp. 1475-1477.
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Kümmler, V., Lell, Alfred, Härle, Volker, Schwarz, Ulrich, Schoedl, T. and Wegscheider, Werner
(2004)
Gradual facet degradation of (Al,In)GaN quantum well lasers.
Applied Physics Letters 84 (16), pp. 2989-2991.
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2003
Schwarz, Ulrich, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, Alfred and Härle, Volker
(2003)
Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers.
Applied Physics Letters 83 (20), p. 4095.
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Schwarz, Ulrich, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, Alfred and Härle, Volker
(2003)
Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers.
physica status solidi a 200 (1), pp. 143-146.
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