Einträge von Kotel'nikov, I. auf dem Publikationsserver

Shul'man, A., Ganichev, Sergey, Dizhur, E., Kotel'nikov, I., Zepezauer, E. und Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. Physica B 272 (1-4), S. 442-447.

Shul'man, A., Ganichev, Sergey, Kotel'nikov, I., Dizhur, E., Prettl, Wilhelm, Ormont, A., Fedorov, Y. und Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. physica status solidi (a) 175 (1), S. 289-296.

Ganichev, Sergey, Shul'man, A., Kotel'nikov, I., Mordovets, N. und Prettl, Wilhelm (1996) Response of tunnel Schottky-barrier junction to radiation pressure of FIR laser radiation. International Journal of Infrared and Millimeter Waves 17 (8), S. 1353-1364.

Kotel'nikov, I., Shul'man, A., Ganichev, Sergey, Varvanin, N., Mayerhofer, B. und Prettl, Wilhelm (1996) Heating of two-dimensional electron gas and LO-phonons in delta-doped GaAs by far-infrared radiation. Solid State Communications 97 (10), S. 827-832.

Kotel'nikov, I., Shul'man, A., Varvanin, N., Ganichev, Sergey, Mayerhofer, B. und Prettl, Wilhelm (1995) Photoresistive effect in in delta-doped GaAs/metal tunnel junctions. JETP Letters 62 (1), S. 53-58.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Ganichev, Sergey und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. Physics of low dimensional structures 12, S. 133-140.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1992) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. Soviet physics JETP 75 (3), S. 495-504.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast point detector of submillimeter radiation. Soviet technical physics letters: Letters to journal of technical physics 15 (4), S. 290-291.

Ganichev, Sergey, Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1986) Photoresistive effect in n-GaAs/Au tunnel junctions during plasma reflection of laser light. JETP Letters 44 (5), S. 301-304.

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Dizhur, E., Ormont, A., Zepezauer, E. und Prettl, Wilhelm (1999) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. World Scientific, Singapore, Th-P58. ISBN 981-02-4030-9.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Varvanin, N., Ganichev, Sergey, Mayerhofer, B. und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: Towe, E., (ed.) Proceedings / 1995 International Semiconductor Device Research Symposium, December 5 - 8, 1995, Band 1. Engineering Academic Outreach, University of Virginia, Charlottesville, Va., S. 99. ISBN 1-88092-003-4.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1995) Fast point detector of submillimeter radiation. In: Levinštejn, Michail E., (ed.) Best of Soviet semiconductor physics and technology, 1989 - 1990. World Scientific, Singapore, S. 567. ISBN 981-021579-7. Volltext nicht vorhanden.

Kotel'nikov, I., Shul'man, A., Ganichev, Sergey, Varvanin, N., Mayerhofer, B. und Prettl, Wilhelm (1995) Non-thermal effect of FIR radiation on tunnel conductance of Schottky-barrier junctions with three- and two-dimensional electron gas. In: Temkin, Richard J., (ed.) Conference digest / Twentieth International Conference on Infrared and Millimeter Waves, December 11-14, 1995, Lake Buena Vista (Orlando), Florida. Lake Buena Vista, Orlando, Florida, S. 391-392.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1993) New fast point detector of FIR radiation. In: Beltram, Fabio und Gornik, Erich, (eds.) Physical concepts and materials for novel optoelectronic device applications II: international symposium; 24 - 27 May 1993, Trieste, Italy. SPIE proceedings series, 1985. SPIE, Bellingham, Wash., S. 526-529. ISBN 0-8194-1234-1.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes. In: MacMillan, Ann Simmons und Tucker, Gail M., (eds.) Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989. Pergamon Press, Oxford, S. 155. ISBN 7-80003-063-6; 0-08-037880-3. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 1: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Acadamey of Sciences, Warsaw, S. 669-672. ISBN 83-00-02465-4.

Shul'man, A., Ganichev, Sergey, Dizhur, E., Kotel'nikov, I., Zepezauer, E. und Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. In: 11. International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), 19. - 23. Juli 1999, Kyoto, Japan. Volltext nicht vorhanden.

Shul'man, A., Ganichev, Sergey, Kotel'nikov, I., Dizhur, E., Prettl, Wilhelm, Ormont, A., Fedorov, Y. und Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. In: Workshop on Surface and Interface Optics '99 (SIO'99), 04. - 08. Mai 1999, Sainte-Maxime, France. Volltext nicht vorhanden.

Shul'man, A., Kotel'nikov, I., Dizhur, E., Ganichev, Sergey und Prettl, Wilhelm (1999) Photo-thermo e.m.f. in metal-semiconductor tunnelling junctions due to giant near field of FIR radiation. In: 4th Russian Conference on Semiconductor Physics: "Semiconductors-99", 25. - 29. Oktober 1999, Novosibirsk, Russia. Volltext nicht vorhanden.

Zepezauer, E., Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Ormont, A. und Prettl, Wilhelm (1998) Nahfeld-Verstaerkung des photoresistiven Effektes in n-GaAs/Al-Schottky-Tunnelkontakten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Volltext nicht vorhanden.

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Dizhur, E., Ormont, A., Zepezauer, E. und Prettl, Wilhelm (1998) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: 24th International Conference on the Physics of Semiconductors, 02. - 07. August 1998, Jerusalem, Israel. Volltext nicht vorhanden.

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Ormont, A., Varvanin, N. und Prettl, Wilhelm (1997) Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode. In: 3rd Russian conference on semiconductor physics "Semiconductors-97", 01. - 05. Dezember 1997, Moskau, Russland. Volltext nicht vorhanden.

Ganichev, Sergey, Kotel'nikov, I., Shul'man, A., Prettl, Wilhelm, Varvanin, N. A. und Mayerhofer, B. (1996) FIR near-zone field enhancement of tunnelling in tunnel Schottky-junction. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1996, Verhandl. DPG (VI) 31. Volltext nicht vorhanden.

Ganichev, Sergey, Kotel'nikov, I., Shul'man, A., Varvanin, N., Mayerhofer, B. und Prettl, Wilhelm (1996) FIR radiation heating of 2DEG delta-doped GaAs. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1996, Verhandl. DPG (VI) 31. Volltext nicht vorhanden.

Ganichev, Sergey, Shul'man, A., Kotel'nikov, I., Varvanin, N., Mayerhofer, B. und Prettl, Wilhelm (1996) Hot-electron photoconductivity and photo-e.m.f. of two-dimensional electron gas in delta-doped GaAs. In: 2nd Russian Conference on Physics of Semiconductors, 1996, St. Petersburg, Russia, 2. Volltext nicht vorhanden.

Kotel'nikov, I., Shul'man, A., Ganichev, Sergey und Prettl, Wilhelm (1996) Influence of near-zone field on photoresistive effect in bulk and delta-doped n-GaAs/metal tunnel junction. In: 2nd Russian Conference on Physics of Semiconductors, 1996, St. Petersburg, Russia, 2. Volltext nicht vorhanden.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Varvanin, N., Ganichev, Sergey, Mayerhofer, B. und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: International Semiconductor Device Research Symposium (invited), 5. - 8. Dezember 1995, Charlottesville, Virginia, USA. Volltext nicht vorhanden.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Ganichev, Sergey und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: 2nd International Conference "Physics of Low-Dimensional Structures-2'' (PLDS–2), 18. - 22. September 1995, Dubna, Russia. Volltext nicht vorhanden.

Ganichev, Sergey, Kotel'nikov, I., Mordovets, N., Shul'man, A. und Prettl, Wilhelm (1995) Investigations of tunnelling process at radiation pressure in Schottky-barrier junction. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1995, Berlin, Germany. Volltext nicht vorhanden.

Kotel'nikov, I., Shul'man, A., Ganichev, Sergey, Varvanin, N., Mayerhofer, B. und Prettl, Wilhelm (1995) Non-thermal effect of FIR radiation on tunnel conductance of Schottky-barrier junctions with three- and two-dimensional electron gas. In: 20th International Conference on Infrared and Millimeter Waves, 11. - 14. Dezember 1995, Lake Buena Vista, Orlando, USA. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1993) New fast point detector of FIR radiation. In: Physical Concepts and Materials for Novel Optoelectronic Device Applications II, 24. - 27. Mai 1993, Triest, Italy. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Detector for laser radiation on the Schottky-barrier tunnel junctions. In: Soviet Conference on Photoelectrical effects in semiconductors, 1989, Tashkent, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes. In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions at plasma reflection of laser light. In: 11th Soviet Seminar on Interaction of Electromagnetic Waves with Semiconductors and Semiconductor-Dielectric Structures 2, 1988, Saratov, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling stimulation in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: 11th Soviet Conference on the Physics of Semiconductors, 1988, Kishinev, USSR. Volltext nicht vorhanden.