Einträge von Ziemann, E. auf dem Publikationsserver

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. und Prettl, Wilhelm (2001) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Materials Science in Semiconductor Processing 4 (1-3), S. 281-284.

Ziemann, E., Ganichev, Sergey, Yassievich, Irina, Perel, V. und Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Journal of Applied Physics 87 (8), S. 3843-3849.

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Prettl, Wilhelm, Istratov, A. und Weber, E. (2000) Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors. Physical Review B 61 (15), S. 10361-10365.

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. und Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. In: European MRS - IUMRS - ICEM 2000: SYMPOSIUM M: Advanced Characterisation of Semiconductor Materials, 30. Mai – 2. Juni 2000, Strasbourg, France. Volltext nicht vorhanden.

Ketterl, Hermann, Ziemann, E., Ganichev, Sergey, Belyaev, A., Schmult, Stefan, Prettl, Wilhelm und Yassievich, Irina (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. Physica B 273-27, S. 766-769.

Ganichev, Sergey, Ziemann, E., Ketterl, Hermann, Prettl, Wilhelm, Yassievich, Irina, Perel, V., Wilke, I. und Haller, E. (1999) Carrier tunneling in high-frequency electric fields. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: The physics of semiconductors; Jerusalem, Israel August 2 - 7, 1998. World Scientific, Singapore, S. 225. ISBN 981-02-3613-1.

Ziemann, E., Ganichev, Sergey, Prettl, Wilhelm, Istratov, A. und Weber, E. (1999) High field limitation of Poole-Frenkel emisson caused by tunneling. In: MacKittrick, Joanna, (ed.) Luminescent materials: [Symposium E, "Luminescent Materials" held at the 1999 MRS Spring Meeting] ; symposium held April 5-8, 1999, San Francisco, California, U.S.A. Materials research society symposium proceedings, 560. Materials Research Society, Warrendale, Pa., S. 239. ISBN 1-558-99467-X. Volltext nicht vorhanden.

Ziemann, E., Ganichev, Sergey, Prettl, Wilhelm, Istratov, A. und Weber, E. (1999) High field limitation of Poole-Frenkel emisson caused by tunneling. In: MRS Spring Meeting, 05. - 08. April 1999, San-Francisco, California, USA. Volltext nicht vorhanden.

Ketterl, Hermann, Ziemann, E., Ganichev, Sergey, Belyaev, A., Schmult, Stefan und Prettl, Wilhelm (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. In: 20th International Conference on Defects in Semiconductors (ICDS-20), 26. - 30. Juli 1999, Berkeley, USA. Volltext nicht vorhanden.

Ziemann, E., Ganichev, Sergey, Ketterl, Hermann und Prettl, Wilhelm (1999) Übergang von Poole-Frenkel-Emission zu phononenunterstützter Tunnelionisation tiefer Störstellen in Halbleitern. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1999, Münster. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Prettl, Wilhelm, Yassievich, Irina, Perel, V., Wilke, I. und Haller, E. (1998) Carrier tunneling in high-frequency electric fields. Physical Review Letters 80 (11), S. 2409-2412.

Ganichev, Sergey, Ziemann, E., Ketterl, H., Prettl, Wilhelm, Yassievich, Irina, Perel, V., Wilke, I. und Haller, E. (1998) Carrier tunneling in high-frequency electric fields. In: 24th International Conference on the Physics of Semiconductors (invited), 02. - 07. August 1998, Jerusalem, Israel. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Schmalz, K. und Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Ashok, S. und Chevallier, J. und Sumino, K. und Sopori, B. L. und Goetz, W., (eds.) Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A. Materials Research Society symposium proceedings, 510. Materials Research Society, Warrendale, Pa., S. 595. ISBN 1-558-99416-5. Volltext nicht vorhanden.

Ziemann, E., Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Defect and impurity engineered semiconductors II: MRS Spring Meeting, 13. - 17. April 1998, San-Francisco, California, USA. Volltext nicht vorhanden.

Ziemann, E., Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1998) Charakterisierung tiefer Störstellen in Halbleitern durch Tunnel-ionisation in Terahertzfeldern. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Ketterl, Hermann, Prettl, Wilhelm, Yassievich, Irina und Perel, V. (1998) Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation. In: Parker, Terence und Smith, S. R. P., (eds.) Proceedings of 23rd International Conference on Infrared and Millimeter Waves, Essex, UK. , S. 62. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Ketterl, Hermann, Prettl, Wilhelm, Yassievich, Irina und Perel, V. (1998) Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation. In: 23th International Conference on Infrared and Millimeter Waves,, 7. - 11. September 1998, Wivenhoe Park, Colchester, Essex, UK. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Yassievich, Irina und Prettl, Wilhelm (1997) Frequency dependence of tunnel ionization of deep impurities in terahertz field. In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Yassievich, Irina und Prettl, Wilhelm (1997) Frequency dependence of tunnel ionization of deep impurities in terahertz field. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Yassievich, Irina und Prettl, Wilhelm (1997) Transition from semi-classical to quantum mechanical limit of terahertz ionization of deep impurities. In: 22nd International Conference on Infrared and Millimeter Waves, 20. - 25. Juli 1997, Wintergreen, USA. Volltext nicht vorhanden.