Anzahl der Einträge: 53.
Ganichev, Sergey,
Danilov, Sergey,
Sollinger, M.,
Zimmermann, J.,
Perel, V.,
Yassievich, Irina und
Prettl, Wilhelm
(2003)
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation.
In: 22nd International Conference on Defects in Semiconductors (ICDS-22), 28.Juli - 1. August 2003, Aarhus, Dänemark.
Volltext nicht vorhanden.
Tarasenko, Sergey,
Perel', V.,
Yassievich, Irina,
Ganichev, Sergey,
Belkov, Vassilij und
Prettl, Wilhelm
(2003)
Spin-dependent tunnelling through a symmetric semiconductor barrier.
In: Spintech II International Conference and School Semiconductor Spintronics and Quantum Information Technology, 04. - 08. August 2003, Brügge, Belgium.
Volltext nicht vorhanden.
Ganichev, Sergey,
Danilov, Sergey,
Sollinger, M.,
Zimmermann, J.,
Perel, V.,
Yassievich, Irina und
Prettl, Wilhelm
(2003)
Suppression of infrared radiation induced tunneling ionization of deep centers by external magnetic field.
In: 27th Int. Conf. of Infrared and Millimeter Waves, Sendai, 2003, Sendai.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ketterl, Hermann,
Prettl, Wilhelm,
Merkulov, I.,
Perel, V.,
Yassievich, Irina und
Malyshev, A.
(2001)
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities.
Physical Review B 63 (20), 201204(R).
Ganichev, Sergey,
Ketterl, Hermann,
Prettl, Wilhelm,
Merkulov, I.,
Perel, V.,
Yassievich, Irina und
Malyshev, A.
(2001)
Giant negative magnetoresistance in germanium doped by multiply charged impurities.
In: 21st International Conference on Defects in Semiconductors, 16. - 20. Juli 2001, Giessen, Germany.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ketterl, Hermann,
Perel, V.,
Yassievich, Irina und
Prettl, Wilhelm
(2001)
High-frequency regime of electron tunneling.
In:
Miura, Noboru und
Ando, T., (eds.)
Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II.
Springer Proceedings in Physics, 87.
Springer, Berlin, S. 1435.
ISBN 3-540-41778-8.
Ganichev, Sergey,
Ziemann, E.,
Yassievich, Irina,
Prettl, Wilhelm,
Istratov, A. und
Weber, E.
(2000)
Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors.
Physical Review B 61 (15), S. 10361-10365.
Ganichev, Sergey,
Ziemann, E.,
Yassievich, Irina,
Perel, V. und
Prettl, Wilhelm
(2000)
Characterization of deep impurities in semiconductors by terahertz tunneling ionization.
In: European MRS - IUMRS - ICEM 2000: SYMPOSIUM M: Advanced Characterisation of Semiconductor Materials, 30. Mai – 2. Juni 2000, Strasbourg, France.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ketterl, Hermann,
Perel, V.,
Yassievich, Irina und
Prettl, Wilhelm
(2000)
High-frequency regime of electron tunneling.
In: 25th International Conference on the Physics of Semiconductors, 18. - 22. August 2000, Osaka, Japan.
Volltext nicht vorhanden.
Ketterl, Hermann,
Ziemann, E.,
Ganichev, Sergey,
Belyaev, A.,
Schmult, Stefan,
Prettl, Wilhelm und
Yassievich, Irina
(1999)
Terahertz tunnel ionization of DX centers in AlGaAs:Te.
Physica B 273-27, S. 766-769.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1999)
Carrier tunneling in high-frequency electric fields.
In:
Gershoni, David, (ed.)
24th International Conference on the Physics of Semiconductors: The physics of semiconductors; Jerusalem, Israel August 2 - 7, 1998.
World Scientific, Singapore, S. 225.
ISBN 981-02-3613-1.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1998)
Carrier tunneling in high-frequency electric fields.
Physical Review Letters 80 (11), S. 2409-2412.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, H.,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1998)
Carrier tunneling in high-frequency electric fields.
In: 24th International Conference on the Physics of Semiconductors (invited), 02. - 07. August 1998, Jerusalem, Israel.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Yassievich, Irina,
Schmalz, K. und
Prettl, Wilhelm
(1998)
Characterization of deep impurities in semiconductors by terahertz tunnel ionization.
In:
Ashok, S. und
Chevallier, J. und
Sumino, K. und
Sopori, B. L. und
Goetz, W., (eds.)
Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A.
Materials Research Society symposium proceedings, 510.
Materials Research Society, Warrendale, Pa., S. 595.
ISBN 1-558-99416-5.
Volltext nicht vorhanden.
Ziemann, E.,
Ganichev, Sergey,
Yassievich, Irina und
Prettl, Wilhelm
(1998)
Characterization of deep impurities in semiconductors by terahertz tunnel ionization.
In: Defect and impurity engineered semiconductors II: MRS Spring Meeting, 13. - 17. April 1998, San-Francisco, California, USA.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina und
Perel, V.
(1998)
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation.
In:
Parker, Terence und
Smith, S. R. P., (eds.)
Proceedings of 23rd International Conference on Infrared and Millimeter Waves, Essex, UK.
, S. 62.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina und
Perel, V.
(1998)
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation.
In: 23th International Conference on Infrared and Millimeter Waves,, 7. - 11. September 1998, Wivenhoe Park, Colchester, Essex, UK.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina,
Raab, W.,
Zepezauer, E. und
Prettl, Wilhelm
(1997)
Accumulation of carriers in a shallow donor excited state of GaP:Te.
In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Frequency dependence of tunnel ionization of deep impurities in terahertz field.
In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Frequency dependence of tunnel ionization of deep impurities in terahertz field.
In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Ionization of deep impurity centers by FIR radiation.
In: 3rd Russian conference on semiconductor physics "Semiconductors-97" (invited), 01. - 05. Dezember 1997, Moskau, Russland.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina,
Raab, W.,
Zepezauer, E. und
Prettl, Wilhelm
(1997)
Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te.
In:
Michel, Jürgen und
Kennedy, Thomas und
Wada, Kazumi und
Thonke, Klaus, (eds.)
Defects in electronic materials II.
Materials Research Society symposium proceedings, 442.
Materials Research Society, Pittsburgh, Pa., S. 465.
ISBN 1-558-99346-0.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina,
Raab, W.,
Zepezauer, E. und
Prettl, Wilhelm
(1997)
Long-living shallow donor excited states of GaP:Te.
In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Transition from semi-classical to quantum mechanical limit of terahertz ionization of deep impurities.
In: 22nd International Conference on Infrared and Millimeter Waves, 20. - 25. Juli 1997, Wintergreen, USA.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina und
Prettl, Wilhelm
(1996)
Adiabatic potentials configuration of deep impurities distinguished by phonon assisted tunneling in FIR radiation fields.
In:
Scheffler, Matthias, (ed.)
23nd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; proceedings. Band 4.
World Scientific, Singapore, S. 2785-2788.
ISBN 981-02-2777-9; 981-022936-4.
Ganichev, Sergey,
Yassievich, Irina,
Raab, W.,
Zepezauer, E. und
Prettl, Wilhelm
(1996)
Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te.
In: MRS Fall Meeting, Symposium Defects in Electronic Materials, 02. - 06. Dezember 1996, Boston, Massachusetts, USA.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina,
Raab, W.,
Zepezauer, E. und
Prettl, Wilhelm
(1996)
Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields.
In:
Ortenberg, Michael von und
Mueller, Hans-Ulrich, (eds.)
Conference proceedings / The 21st International Conference on Infrared and Millimeter waves: Berlin, July 14 - 19, 1996, Federal Republic of Germany.
Humboldt-Universität, Berlin, CF2.
ISBN 3-00-000800-4.
Ganichev, Sergey,
Yassievich, Irina,
Raab, W.,
Zepezauer, E. und
Prettl, Wilhelm
(1996)
Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields.
In: 21st International Conference on Infrared and Millimeter waves, 14. - 19. Juli 1996, Berlin, Germany.
Volltext nicht vorhanden.
Ganichev, Sergey,
Yassievich, Irina und
Prettl, Wilhelm
(1996)
Tunnel ionization of deep impurities in semiconductors by intense FIR radiation.
In:
Ortenberg, Michael von und
Mueller, Hans-Ulrich, (eds.)
Conference proceedings / The 21st International Conference on Infrared and Millimeter waves: Berlin, July 14 - 19, 1996, Federal Republic of Germany.
Humboldt-Universität, Berlin, CM7.
ISBN 3-00-000800-4.
Volltext nicht vorhanden.
Ganichev, Sergey,
Diener, J.,
Yassievich, Irina,
Prettl, Wilhelm,
Meyer, B. und
Benz, K.
(1995)
Tunnelling ionization of autolocalized DX- centers in terahertz fields.
Physical Review Letters 75 (8), S. 1590-1593.
Ganichev, Sergey,
Diener, J.,
Yassievich, Irina,
Prettl, Wilhelm,
Meyer, B. und
Benz, K.
(1995)
Direct evidence for autolocalization states of DX center in Al_{x}Ga_{(1-x)}Sb.
In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1995, Berlin, Germany.
Volltext nicht vorhanden.
Ganichev, Sergey,
Diener, J.,
Yassievich, Irina,
Prettl, Wilhelm,
Meyer, B. und
Benz, K.
(1995)
Direct experimental evidence of autolocalization nature of DX- centers.
Material Science Forum 196-20, S. 1079-1084.
Ganichev, Sergey,
Diener, J.,
Yassievich, Irina,
Prettl, Wilhelm,
Meyer, B. und
Benz, K.
(1995)
Direct experimental evidence of autolocalization nature of DX- centers.
In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan.
Volltext nicht vorhanden.
Ganichev, Sergey,
Mayerhofer, B.,
Diener, J.,
Yassievich, Irina und
Prettl, Wilhelm
(1995)
Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields.
In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan.
Volltext nicht vorhanden.
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Yaroshetskii, I. und
Yassievich, Irina
(1989)
Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization.
In:
MacMillan, Ann Simmons und
Tucker, Gail M., (eds.)
Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989.
Pergamon Press, Oxford, S. 597.
ISBN 7-80003-063-6; 0-08-037880-3.
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Yaroshetskii, I. und
Yassievich, Irina
(1989)
Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization.
In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China.
Volltext nicht vorhanden.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, Irina
(1988)
Light impact ionization in semiconductors.
In:
Zawadzki, Włodzimierz, (ed.)
19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988.
Institute of Physics, Polish Academy of Sciences, Warsaw, S. 1373-1376.
ISBN 83-00-02465-4.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, Irina
(1988)
Light impact ionization in semiconductors.
In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland.
Volltext nicht vorhanden.
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